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| SI4947DY Dual P-Channel 30-V (D-S) Rated MOSFET Product Summary VDS (V) -30 30 rDS(on) (W) 0.085 @ VGS = -10 V 0.19 @ VGS = -4.5 V ID (A) "3.5 "2.5 S1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View D1 P-Channel MOSFET D2 P-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2 Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a 150 C) Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit -30 "20 "3.5 "2.8 "20 -1.7 2.0 1.3 -55 to 150 Unit V A W _C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70156. A SPICE Model data sheet is available for this product (FaxBack document #70554). Symbol RthJA Limit 62.5 Unit _C/W Siliconix S-49520--Rev. C, 18-Dec-96 1 SI4947DY Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On State Drain Source On-State Resistanceb Forward Transconductance b Diode Forward Voltageb VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -30 V, VGS = 0 V VDS = -30 V, VGS = 0 V, TJ = 55_C VDS w -5 V, VGS = -10 V VGS = -10 V, ID = 2.5 A VGS = -4.5 V, ID = 1.8 A VDS = -15 V, ID = -2.5 A IS = -1.7 A, VGS = 0 V -15 0.066 0.125 5.0 -0.8 -1.2 0.085 0.19 1.0 "100 -1 -25 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = -1.7 A, di/dt = 100 A/ms VDD = -10 V, RL = 10 W ID ^ -1 A, VGEN = -10 V, RG = 6 W VDS = -10 V, VGS = -10 V, ID = -2.5 A 8.7 1.9 1.3 7 9 14 8 50 15 18 27 15 80 ns 15 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. 2 Siliconix S-49520--Rev. C, 18-Dec-96 SI4947DY Typical Characteristics (25_C Unless Otherwise Noted) Output Characteristics 20 VGS = 10, 9, 8, 7, 6 V 16 I D - Drain Current (A) I D - Drain Current (A) 5V 12 16 20 TC = -55_C 25_C 125_C 12 Transfer Characteristics 8 4V 4 3V 0 0 2 4 6 8 8 4 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.40 700 600 rDS(on) - On-Resistance ( W ) 0.32 C - Capacitance (pF) 500 400 300 Capacitance Ciss 0.24 VGS = 4.5 V 0.16 VGS = 10 V Coss 200 100 Crss 0.08 0 0 3 6 9 12 15 ID - Drain Current (A) 0 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) 10 VGS - Gate-to-Source Voltage (V) VDS = 10 V ID = 2.5 A Gate Charge 2.0 1.8 rDS(on) - On-Resistance ( W ) (Normalized) 1.6 1.4 1.2 1.0 0.8 0.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 2.5 A 8 6 4 2 0 0 2 4 6 8 10 0.4 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Siliconix S-49520--Rev. C, 18-Dec-96 3 SI4947DY Typical Characteristics (25_C Unless Otherwise Noted) Source-Drain Diode Forward Voltage 20 0.5 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) 10 rDS(on) - On-Resistance ( W ) 0.4 0.3 ID = 2.5 A 0.2 TJ = 150_C TJ = 25_C 0.1 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Source-to-Drain Voltage (V) 0 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) 0.8 0.6 VGS(th) Variance (V) 0.4 0.2 0.0 -0.2 -0.4 -50 Threshold Voltage Single Pulse Power 30 25 ID = 250 mA Power (W) -25 0 25 50 75 100 125 150 20 15 10 5 0 0.01 0.1 1 Time (sec) 10 30 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 1 10 30 Square Wave Pulse Duration (sec) 4 Siliconix S-49520--Rev. C, 18-Dec-96 |
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